Catalytic oxidation of silicon nitride thin films using potassium

Conference · Thu Dec 31 23:00:00 EST 1987

OSTI ID:6418778

Rogers, Jr, J W; Blair, D S; Peden, C H.F.

Thin silicon nitride films on a Si(100) substrate have been oxidized using potassium in a low thermal budget process. The presence of potassium on the Si/sub 3/N/sub 4/ surface greatly lowers the temperature-time requirements for oxidation as compared with direct thermal oxidation. 6 refs., 1 fig.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6418778
• Report Number(s): SAND-88-1730C; CONF-881155-46; ON: DE89007146
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
360205* -- Ceramics
Cermets
& Refractories-- Corrosion & Erosion
ALKALI METALS
ANNEALING
CATALYTIC EFFECTS
CHALCOGENIDES
CHEMICAL REACTIONS
DEPOSITION
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
HEAT TREATMENTS
MEDIUM TEMPERATURE
METALS
NITRIDES
NITROGEN COMPOUNDS
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
POTASSIUM
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
THIN FILMS