Surface chemistry of ceramic thin film and powder surfaces

Conference · Wed Jan 01 04:00:00 EST 1986

OSTI ID:5533387

Peden, C H.F.

As part of a program to prepare ultra-pure silicon-nitride (Si/sub 3/N/sub 4/) powders for consolidation studies, we are concerned with preventing the oxidation of the powders which occurs upon exposure to air. In order to study the oxidation kinetics of a Si/sub 3/N/sub 4/ surface, we have been preparing a model system by nitriding a Si(100) single crystal with ammonia (NH/sub 3/) and hydrazine (N/sub 2/H/sub 4/) in ultrahigh vacuum (uhv). Such a procedure yields a thin film of silicon-nitride grown on the single crystal substrate. Further, a determination of the growth kinetics of the nitrided film will enable control of the film thickness. These latter studies are the focus of this report. Studies such as these are expected to have an impact on semiconductor technology where thermally grown silicon-nitride layers are widely used as passivating and dielectric thin films. Understanding of the initial stages of the nitriding process obtained in our studies will be particularly useful as the industry moves to ever smaller circuits in IC's for VLSI devices.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5533387
• Report Number(s): SAND-86-1550C; CONF-860749-1; ON: DE86012657
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201* -- Chemical & Physicochemical Properties
AIR
CHEMICAL REACTION KINETICS
CHEMICAL REACTIONS
CRYSTAL STRUCTURE
FILMS
FLUIDS
GASES
KINETICS
NITRIDES
NITROGEN COMPOUNDS
OXIDATION
PNICTIDES
REACTION KINETICS
SILICON COMPOUNDS
SILICON NITRIDES
THIN FILMS