Thermally grown Si[sub 3]N[sub 4] thin films on Si(100): Surface and interfacial composition

Journal Article · Tue Jun 15 04:00:00 EDT 1993 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.47.15622· OSTI ID:6543088

Peden, C H.F.; Rogers, Jr, J W; Shinn, N D; Kidd, K B; Tsang, K L ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)

Synchrotron photoemission measurements of the Si(2[ital p]) and N(1[ital s]) levels have been made on Si[sub 3]N[sub 4] thin films grown [ital in] [ital situ] by high-temperature reaction of Si(100) with NH[sub 3]. Surface sensitivity is enhanced in comparison to laboratory photoemission experiments by selecting photon energies that minimize the photoelectron mean free path in the nitride film. From the results, we are able to determine not only the types of chemical species present, but their approximate location within the film as well. Careful analysis of the Si(2[ital p]) photoemission spectra reveals the presence of a unique silicon species with a Si(2[ital p]) binding energy intermediate between elemental silicon and silicon in Si[sub 3]N[sub 4]. Furthermore, the persistence of this species with increasing nitride-film thickness supports its assignment to a monolayer of silicon at the outermost surface layer, on top of the growing stoichiometric Si[sub 3]N[sub 4] film. These surface silicon atoms can be distinguished from silicon atoms in intermediate oxidation states at the Si[sub 3]N[sub 4]/Si interface. The spectroscopic evidence for chemically distinct surface, nitride, and interfacial silicon is discussed in terms of the silicon nitridation mechanism.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6543088
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 47:23; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
BINDING ENERGY
CHEMICAL REACTIONS
ELEMENTS
EMISSION
ENERGY
FILMS
INTERFACES
NITRIDES
NITROGEN COMPOUNDS
OXIDATION
PHOTOEMISSION
PNICTIDES
SECONDARY EMISSION
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
SURFACE PROPERTIES
THIN FILMS