Optical studies of GaInP(ordered)/GaAs and GaInP(ordered)/GaP/GaAs heterostructures

Journal Article · Tue Sep 01 00:00:00 EDT 1998 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.368426· OSTI ID:641508

Kwok, S H; Yu, P Y ^[1]; Zeman, J; Jullian, S; Martinez, G ^[2]; Uchida, K ^[3]

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1. Department of Physics, University of California, Berkeley, California 94720 (United States)
2. Grenoble High Magnetic Field Laboratory CNRS/MPI-FKF, BP 166, 25, Avenue des Martyrs, 38042 Grenoble Cedex 9 (France)
3. Department of Communications and Systems, University of Electro-communications, Chofu, Tokyo (Japan)

We report on a detailed optical study of emission from a series of GaInP (ordered)/GaAs heterostructures. Some of these structures contain one or two thin ({approximately}2 nm) layers of GaP between the GaInP and GaAs layers. A so-called {open_quotes}deep emission{close_quotes} band at 1.46 eV is observed in all our samples. However, at high excitation power, an emission above the band gap of GaAs (previously identified as quantum well emission) emerges only in structures where GaP layers are inserted on both sides in between the GaAs well and its GaInP barriers. From the pressure dependence we have identified the deep emission peak as due to donor{endash}acceptor pair transitions at the GaAs/GaInP interface. The insertion of GaP layers between the GaInP (ordered) and GaAs layers helps to suppress the defects which contribute to this deep emission. By applying pressure to the sample which exhibits quantum well emission we have determined its band alignments. We show that the GaP layers form two effective barriers for confining electrons within the GaAs well. However, the magnetic field dependence of the quantum well emission reveals that the electrons form only a quasi-two-dimensional gas inside the GaAs well. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 641508
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 84; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRONIC STRUCTURE
EMISSION SPECTRA
ENERGY GAP
EXCITATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MAGNETIC FIELDS
MAGNETO-OPTICAL EFFECTS
PHOTOLUMINESCENCE
PRESSURE DEPENDENCE