Polarization fields and band offsets in GaInP/GaAs and ordered/disordered GaInP superlattices
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Using the first-principles pseudopotential method we have calculated band offsets between ordered and disordered Ga{sub 0.5}In{sub 0.5}P and between ordered GaInP{sub 2} and GaAs. We find valence band offsets of 0.10 and 0.27 eV for the two interfaces with the valence band maximum on ordered GaInP{sub 2} and GaAs, respectively. Using experimental band gaps these offsets indicate that the ordered/disordered Ga{sub 0.5}In{sub 0.5}P interface has type I band alignment and that the ordered GaInP{sub 2}/GaAs interface has type II alignment. Assuming transitivity of the band offsets, these results suggest a type I alignment between disordered Ga{sub 0.5}In{sub 0.5}P and GaAs and a transition from type I to type II as the GaInP side becomes more ordered. Our calculations also show that ordered GaInP{sub 2} has a strong macroscopic electric polarization. This polarization will generate electric fields in inhomogeneous samples, strongly affecting the electronic properties of the material. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- National Renewable Energy Laboratory
- DOE Contract Number:
- AC36-83CH10093
- OSTI ID:
- 283793
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 68; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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