Type-II[r arrow]type-I transition in (Ga[ital X])[sub [ital n]]/(In[ital X])[sub [ital n]] (001) superlattices ([ital X]=P, Sb) as a function of period [ital n]

Journal Article · Thu Sep 15 04:00:00 EDT 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.50.8094· OSTI ID:7039132

Franceschetti, A; Wei, S; Zunger, A ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

Coherently strained Ga[ital X]/In[ital X] interfaces ([ital X]=P, Sb) lattice matched to a (001)-oriented substrate are predicted to have a type-I band-gap alignment, with both the valence-band maximum and the conduction-band minimum (CBM) located on the In-rich material. At the same time, the CBM wave function of short-period (Ga[ital X])[sub [ital n]]/(In[ital X])[sub [ital n]] superlattices is predicted to have larger amplitude on the Ga[ital X] layers, leading to a type-II alignment. We show that (i) a type-II[r arrow]type-I transition occurs around the period [ital n]=4; (ii) this transition has a different origin with respect to the well-known case of GaAs/AlAs superlattices; (iii) the band structure of ultrathin superlattices cannot be explained in terms of a simple effective-mass theory; (iv) the wave-function localization in short-period superlattices is determined by the atomic orbital energies.

• DOE Contract Number: AC36-83CH10093
• OSTI ID: 7039132
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 50:11; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ANTIMONIDES
ANTIMONY COMPOUNDS
BAND THEORY
EFFECTIVE MASS
ELECTRONIC STRUCTURE
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ANTIMONIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERFACES
MASS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
STRAINS
TRANSPORT THEORY