Demonstration of the effects of interface strain on band offsets in lattice-matched III-V semiconductor superlattices

Journal Article · Mon Aug 06 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103626· OSTI ID:6765938

Nelson, J S; Kurtz, S R; Dawson, L R; Lott, J A ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (USA)

A first principles total energy self-consistent pseudopotential calculation is used to predict the band offset in the lattice-matched superlattice InAs/Al{sub 0.8}Ga{sub 0.2}As{sub 0.14}Sb{sub 0.86}. We find that inclusion of interface strain changes the character of the band offset from nominally type II to strongly type II. The predicted band offset at the minimum energy configuration is in excellent agreement with the value determined from infrared photoluminescence measurements.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6765938
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:6; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

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36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
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