Photoluminescence and the band structure of InAsSb strained-layer superlattices

Journal Article · Mon Jul 18 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100135· OSTI ID:7201199

Kurtz, S R; Osbourn, G C; Biefeld, R M; Lee, S R

Infrared photoluminescence measurements were performed on InAs/sub 0.13/Sb/sub 0.87/ /InSb strained-layer superlattices. In thick layered structures we observed very low energy transitions proving that a type II superlattice occurs in the InAsSb system. Band structures were calculated based on estimates of the band offsets and strain shifts obtained from the photoluminescence data.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• OSTI ID: 7201199
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
EXPERIMENTAL DATA
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
INFRARED RADIATION
INFRARED SPECTRA
LAYERS
LUMINESCENCE
MATERIALS
NUMERICAL DATA
PHOTOCONDUCTORS
PHOTOLUMINESCENCE
PNICTIDES
RADIATIONS
SPECTRA
SUPERLATTICES