Addendum: Deep emission band at GaInP/GaAs interface

Journal Article · Wed Oct 01 00:00:00 EDT 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.365686· OSTI ID:542555

Kwok, S H; Yu, P Y ^[1]; Uchida, K; Arai, T ^[2]

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1. Department of Physics, University of California, Berkeley, California 94720-7300 (United States)
2. Tsukuba Laboratories, Nippon Sanso Company, 10 Ohkubo, Tsukuba, Ibaraki, 300-33 (Japan)

We have performed high pressure photoluminescence studies of the deep emission band in GaInP/GaAs quantum well. Our results suggest that this peak is related to donor-acceptor pair transitions in the GaAs well. {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 542555
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM PHOSPHIDES
INTERFACES
PHOTOLUMINESCENCE
PRESSURE DEPENDENCE
VAPOR PHASE EPITAXY
VERY HIGH PRESSURE