Submilliamp threshold vertical-cavity laser diodes

Journal Article · Mon Oct 15 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103361· OSTI ID:6408864

Geels, R S; Coldren, L A ^[1]

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1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (USA)

We report for the first time room-temperature, continuous-wave operation of individual vertical-cavity laser diodes with submilliampere threshold currents. A single quantum well active region emitting at 979 nm surrounded by GaAs/AlAs Bragg reflector mirrors was used. Threshold currents were as low as 0.7 mA. A record low linewidth-power product of 5 MHz mW and a linewidth as narrow as 85 MHz was measured. High yield and good uniformity were demonstrated.

• OSTI ID: 6408864
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:16; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DESIGN
EFFICIENCY
ELECTRIC CURRENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER MIRRORS
LASERS
LINE WIDTHS
MIRRORS
OPERATION
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT