The incorporation of boron in silicon epitaxial layer growth in the presence of small amounts of water

Journal Article · Wed Aug 01 00:00:00 EDT 1984 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2115987· OSTI ID:6407182

Hintzen, H T.J.M.; Bloem, J; Giling, L J

The amount of electrically active boron which is incorporated during the CVD of silicon using SiH/sub 4/ in H/sub 2/ at atmospheric pressure and B/sub 2/H/sub 6/ as dopant appears to be very sensitive to the input pressure of HCl and the presence of small amounts of water. Equilibrium gas-phase compositions have been calculated for this system using an iterative procedure. Assuming thermodynamic equilibrium between gas phase and solid phase, the experimentally observed dependences can be satisfactorily described. Based on these calculations also, an explanation can be given for the unexpected experimental results on boron autodoping.

• Research Organization: R.I.M., Department of Solid State III, Nijmegen Catholic University of Nijmegen, Toernooiveld
• OSTI ID: 6407182
• Journal Information: J. Electrochem. Soc.; (United States), Vol. 131:8
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
CHEMICAL VAPOR DEPOSITION
ELECTROCHEMISTRY
PHASE STUDIES
ATMOSPHERIC PRESSURE
BORON HYDRIDES
CONTROLLED ATMOSPHERES
CRYSTAL DOPING
CRYSTAL GROWTH
EPITAXY
HYDROCHLORIC ACID
HYDROGEN
SILANES
THERMAL EQUILIBRIUM
WATER
ATMOSPHERES
BORON COMPOUNDS
CHEMICAL COATING
CHEMISTRY
DEPOSITION
ELEMENTS
EQUILIBRIUM
HYDRIDES
HYDROGEN COMPOUNDS
INORGANIC ACIDS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
OXYGEN COMPOUNDS
SEMIMETALS
SILICON COMPOUNDS
SURFACE COATING
360601* - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies