Antimony, arsenic, phosphorus, and boron autodoping in silicon epitaxy

Journal Article · Thu Aug 01 00:00:00 EDT 1985 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2114258· OSTI ID:6466748

Graef, M W.M.; de Moor, H H.C.; Leunissen, B J.H.

Lateral autodoping is encountered if silicon wafers with heavily doped areas are subjected to silicon epitaxy. The characteristics of the autodoping profile are determined by the pre-epitaxial bake conditions and by the identity of the impurities. Lateral autodoping originating from arsenic- or antimony-implanted silicon substrates can be suppressed by reduction of the total pressure during the epitaxial process. In contrast, autodoping is enhanced at reduced pressure if boron-doped buried layers are employed. These phenomena can be accounted for if chemical processes in the gas phase, which involve the dopant, are considered. Thermodynamic computations have been carried out in orde to explain the influence of process conditions such as temperature, total pressure, and the presence of chlorine on the autodoping behavior or antimony, arsenic, phosphorus, and boron. Evaporated dopant atoms are converted to stabl gaseous compounds such as SbCl for antimony, AsH and As/sub 2/ for arsenic, PH/sub 2/, PH/sub 3/, and P/sub 2/ for phosphorus, and BHCl/sub 2/ for boron. The reincorporation of the dopant in the epitaxial layer is governed by the partial pressure of monoatomic species in the gas phase. Mass action law describes the influence of total pressure on the efficiency of the autodoping process.

• Research Organization: Philips Research Laboratories, Eindhoven
• OSTI ID: 6466748
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 132:8; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
ANTIMONY
ANTIMONY CHLORIDES
ANTIMONY COMPOUNDS
ARSENIC
ARSENIC COMPOUNDS
ARSENIC HYDRIDES
BORON
BORON COMPOUNDS
CHLORIDES
CHLORINE
CHLORINE COMPOUNDS
COMPUTER CALCULATIONS
CRYSTAL DOPING
DOPED MATERIALS
ELEMENTS
EPITAXY
HALIDES
HALOGEN COMPOUNDS
HALOGENS
HYDRIDES
HYDROGEN COMPOUNDS
IMPURITIES
MATERIALS
METALS
NONMETALS
PHASE STUDIES
PHOSPHORUS
PHOSPHORUS COMPOUNDS
PHOSPHORUS HYDRIDES
PRESSURE DEPENDENCE
PRESSURE DROP
SEMIMETALS
SILICON
THERMODYNAMICS