Method utilizing laser-processing for the growth of epitaxial p-n junctions
This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.
- DOE Contract Number:
- W-7405-ENG-26
- Assignee:
- Dept. of Energy
- Patent Number(s):
- None
- OSTI ID:
- 7082044
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300 -- Engineering-- Lasers-- (-1989)
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
BORON
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
GROWTH
JUNCTIONS
LASER RADIATION
MATERIALS
NONMETALS
P-N JUNCTIONS
PHOSPHORUS
PHYSICAL PROPERTIES
PROCESSING
PRODUCTION
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON