A defect etchant for <100> InGaAsP
Journal Article
·
· J. Electrochem. Soc.; (United States)
A defect revealing etching technique for n-InGaAsP grown on <100> InP by LPE is reported. A chemical solution used with illumination produces protrusions in thin quaternary layers, which correlate well with dislocation pits in underlying and overlying InP layers. Using the new etchant, an increase in defect density in the active layer over the defect density in the buffer layer has been detected in lattice matched (less than or equal to0.04%) InGaAsP/InP LED structures.
- Research Organization:
- AT and T Bell Laboratories, Murray Hill, New Jersey
- OSTI ID:
- 6406899
- Journal Information:
- J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 131:8; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
CHEMISTRY
CORROSION
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTROCHEMISTRY
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LAYERS
LINE DEFECTS
MATERIALS
N-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PITTING CORROSION
PNICTIDES
SEMICONDUCTOR MATERIALS
SURFACE FINISHING
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
CHEMISTRY
CORROSION
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTROCHEMISTRY
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LAYERS
LINE DEFECTS
MATERIALS
N-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PITTING CORROSION
PNICTIDES
SEMICONDUCTOR MATERIALS
SURFACE FINISHING