High-power single longitudinal mode operation of inverted channel substrate planar lasers
Journal Article
·
· J. Appl. Phys.; (United States)
A high-power GaAs/GaAlAs double heterostructure laser is developed by using the metalorganic chemical vapor deposition technique. The laser has an index-guided, inverted channel substrate planar structure. Linear output power characteristics were observed to approx.80 mW cw on submount without facet coatings. The device operated in a stable single mode to a power >40 mW.
- Research Organization:
- One Space Park, Redondo Beach, California 90278
- OSTI ID:
- 6401735
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:11; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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·
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
DATA
DEPOSITION
EFFICIENCY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
OPERATION
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PNICTIDES
POWER
POWER RANGE MILLI W
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STABILITY
SURFACE COATING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
DATA
DEPOSITION
EFFICIENCY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
OPERATION
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PNICTIDES
POWER
POWER RANGE MILLI W
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STABILITY
SURFACE COATING