Process for fast doping of semiconductors
Patent
·
OSTI ID:6385356
The present invention relates to a process for fast doping of semiconductors, consisting in implanting foreign particles in a substrate and in rendering them electrically active so as to modify the physical properties of said substrate, wherein the foreign particles constituting the dopant material arrive on the substrate closely in time and space so that the energy brought by each particle when it is implanted in the substrate cooperates with the energy of the other particles so as to produce a local liquefaction of the substrate, allowing the particles to be positioned in the substitutional sites of the crystal lattice of the substrate and allowing said crystal lattice, which was disturbed when the particles penetrated in the substrate, to be rearranged.
- Assignee:
- Commissariat A L Energie Atomique (France)
- Patent Number(s):
- US 4370176
- OSTI ID:
- 6385356
- Country of Publication:
- United States
- Language:
- English
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