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Process for doping semiconductors

Patent ·
OSTI ID:6355941
;
The present invention relates to a process for doping semiconductors, comprising the steps of: effecting implantation by recoil consisting in depositing on the surface of the substrate a layer of material containing dopant particles and in bombarding said layer by means of a beam of bombarding particles, which are in particular non-dopant, so as to cause the dopant particles to penetrate in the substrate; eliminating the layer of material deposited on the surface of the substrate; and effecting transitory annealing. The invention is applicable to the manufacture of solar cells.
Assignee:
Commissariat a I'Energie Atomique (France)
Patent Number(s):
US 4452644
OSTI ID:
6355941
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
ANNEALING
BEAMS
CRYSTAL DOPING
DIRECT ENERGY CONVERTERS
EQUIPMENT
FABRICATION
HEAT TREATMENTS
ION BEAMS
ION IMPLANTATION
LIQUEFACTION
MATERIALS
PARTICLES
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR MATERIALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
THERMOCHEMICAL PROCESSES