Process for doping semiconductors
Patent
·
OSTI ID:6385351
The present invention relates to a process for doping semiconductors, comprising the successive steps of: effecting implantation by recoil consisting in depositing on the surface of the substrate a layer of material containing dopant particles and in bombarding said layer by means of a beam of bombarding particles, which are in particular non-dopant, so as to cause the dopant particles to penetrate in the substrate; eliminating the layer of material deposited on the surface of the substrate; and effecting transitory annealing. The invention is applicable to the manufacture of solar cells.
- Assignee:
- Commissariat A L Energie Atomique (France)
- Patent Number(s):
- US 4368083
- OSTI ID:
- 6385351
- Country of Publication:
- United States
- Language:
- English
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