Generalized thermal model for stripe-geometry injection lasers

Journal Article · Sun Nov 01 04:00:00 EST 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339282· OSTI ID:6384033

Papannareddy, R; Ferguson, W; Butler, J K

We present a generalized thermal model based on a finite-element code for estimating the temperature rise, associated thermal resistance, and cw optical power in a stripe-geometry double-heterostructure laser. In particular, we report the first thermal analysis of a zinc-diffused, oxide-insulated AlGaAs laser structure below and above threshold taking into account the lateral current spreading, the temperature dependence of the threshold current, and external differential quantum efficiency. The results show that the thermal resistance of the device increases approximately by 18% with the effects of zinc diffusion and oxide insulation.

• Research Organization: Southern Methodist University, Dallas, Texas 75275
• OSTI ID: 6384033
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 62:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
DATA
DIFFUSION
EFFICIENCY
ELEMENTS
ENERGY
ENERGY TRANSFER
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TRANSFER
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
METALS
NUMERICAL DATA
OPERATION
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
POWER
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THEORETICAL DATA
THERMODYNAMICS
THRESHOLD ENERGY
ZINC