Selective epitaxial growth of silicon carbide on SiO{sub 2} masked Si(100): The effects of temperature
- Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506 (United States)
- Department of Mechanical Engineering, Wichita State University, Wichita, Kansas 67260 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87123-0603 (United States)
- U.S. Air Force Laboratory, Hanscom Air Force Base, Massachusetts 01731 (United States)
- Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704 (United States)
The effect of substrate temperature on the growth rate, crystal grain size, and SiO{sub 2} mask stability in the selective epitaxial growth of silicon carbide deposited from SiH{sub 4}, C{sub 2}H{sub 4}, and HCl{sub 1} on silicon dioxide masked silicon (100) was examined. Depositing at atmospheric pressure and a Cl/Si input ratio of 50 to achieve good selectivity, increasing the substrate temperature from 950 to 1000thinsp{degree}C increased the growth rate and the crystal size, and improved the film{close_quote}s surface morphology, but also enhanced the SiO{sub 2} mask degradation rate, causing a loss of selectivity for long deposition times. For prolonged deposition times at 1000thinsp{degree}C, SiC nucleation occurred at both voids formed in the mask from its reaction with the silicon substrate and on the SiO{sub 2} mask itself{emdash}a consequence of increasing oxide surface roughness.{copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 636133
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 84; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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