Uniformly thick selective epitaxial silicon
The growth rate of selective epitaxial silicon is a function of the nucleation site seed area and the ratio of the area of the SiO/sub 2/ mask to silicon area exposed. Therefore, with commonly employed IC circuit patterns, it is difficult to achieve, using conventional epitaxial growth conditions, silicon deposit thickness uniformity needed for IC processing. This constitutes one of the main obstacles to utilizing CVD selective epitaxy as an SOI process or as a replacement of LOCOS for oxide isolation. Reported in this publication is a method of growing uniformly thick selective epitaxial silicon on a silicon wafer with SiO/sub 2/ mask openings to the substrate of various dimensions, and with various Si/SiO/sub 2/ area ratios. The desired control of the deposit thickness is achieved at reduced pressures (below 50 torr) and relatively low deposition temperatures (850 +- 10C).
- Research Organization:
- David Sarnoff Research Center, Princeton, NJ 08543-0432
- OSTI ID:
- 6167585
- Journal Information:
- J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 135:5; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CONTROL
CRYSTAL GROWTH
DEPOSITION
DIMENSIONS
ELECTRONIC CIRCUITS
ELEMENTS
EPITAXY
FABRICATION
HIGH TEMPERATURE
INTEGRATED CIRCUITS
LOW PRESSURE
MICROELECTRONIC CIRCUITS
NUCLEATION
OXIDES
OXYGEN COMPOUNDS
PRESSURE CONTROL
QUALITY CONTROL
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SURFACE COATING
TEMPERATURE CONTROL
THICKNESS