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Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

Technical Report ·
DOI:https://doi.org/10.2172/6358394· OSTI ID:6358394
Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.
Research Organization:
Pacific Northwest Lab., Richland, WA (USA)
Sponsoring Organization:
DOE/ER; DOHHS
DOE Contract Number:
AC06-76RL01830
OSTI ID:
6358394
Report Number(s):
PNL-7367; ON: DE91005300; CNN: NIH-Y01-ES-70153
Country of Publication:
United States
Language:
English