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Theory of beam induced current characterization of grain boundaries in polycrystalline solar cells

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.332205· OSTI ID:6347302

A theoretical analysis is given of the induced current profiles at grain boundaries in polycrystalline solar cells, as obtained by light or electron beam excitation. The area A and the variance sigma/sup 2/ of the contrast profile of a grain boundary are calculated for realistic generations as functions of the interface recombination velocity v/sub s/ and the minority carrier diffusion length L. A graphical new procedure is proposed which allows the simultaneous determination of v/sub s/ and L from the measured values of A and sigma. The evaluation of an experimental electron beam induced current profile illustrates the applicability of the theory.

Research Organization:
CNR-Istituto LAMEL, Via Castagnoli 1, 40126 Bologna, Italy
OSTI ID:
6347302
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:3; ISSN JAPIA
Country of Publication:
United States
Language:
English