Theoretical study of the effects of interacting grain boundaries on electron-beam-induced currents

Journal Article · Sat Apr 14 23:00:00 EST 1984 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.333339· OSTI ID:5222444

Luke, K L; Roos, O v

The influence of several grain boundaries on the electron beam induced current in polycrystalline silicon is investigated. The simple geometry contemplated here, consisting of two plane parallel grain boundaries possessing different effective, albeit constant, surface recombination velocities, intersecting a planar junction at right angles allows for an exact solution of the corresponding boundary value problem. It is shown that if the distance between the grain boundaries w becomes less than the diffusion length for minority carriers L within the grain, the grain boundary with the smaller effective recombination velocity becomes less and less visible the smaller the ratio w/L.

• Research Organization: Department of Physics-Astronomy, California State University, Long Beach, California 90840
• OSTI ID: 5222444
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 55:8; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
BEAM INJECTION
BOUNDARY-VALUE PROBLEMS
CRYSTAL STRUCTURE
CRYSTALS
CURRENTS
DIFFUSION LENGTH
DIMENSIONS
ELECTRIC CURRENTS
ELECTRON BEAM INJECTION
ELECTRON MICROSCOPES
ELEMENTS
GRAIN BOUNDARIES
HOLES
JUNCTIONS
LENGTH
MICROSCOPES
MICROSTRUCTURE
P-N JUNCTIONS
POLYCRYSTALS
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SURFACES