Boundary conditions at grain boundaries

Journal Article · Fri Jul 01 00:00:00 EDT 1983 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.332517· OSTI ID:6015893

von Roos, O

Grain boundaries in polycrystalline semiconductor material are frequently idealized as surfaces possessing a characteristic surface recombination velocity. Minority carrier densities generated by external sources (electron beams, light, etc.) in polycrystalline p--n junctions must satisfy certain boundary conditions at these grain boundaries which will be derived. It will also be shown that a ''folding technique'' introduced recently to deal with this problem is of limited value.

• Research Organization: Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
• OSTI ID: 6015893
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

656000* -- Condensed Matter Physics
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
BOUNDARY CONDITIONS
CARRIER DENSITY
CHARGE CARRIERS
CRYSTAL STRUCTURE
CRYSTALS
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
GRAIN BOUNDARIES
JUNCTIONS
LEPTON BEAMS
MATERIALS
MATHEMATICAL MODELS
MICROSTRUCTURE
P-N JUNCTIONS
PARTICLE BEAMS
POLYCRYSTALS
RADIATIONS
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SURFACES
VISIBLE RADIATION