Elimination of planar faults in lattice-matched heteroepitaxial films using ion-assisted molecular-beam epitaxy

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.586719· OSTI ID:6342864

Choi, C H; Barnett, S A ^[1]; Hultman, L ^[2]

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1. Northwestern Univ., Evanston, IL (United States)
2. Linkoeping Univ. (Sweden)

The nucleation and defect structure of GaAs films grown on GE(001) by molecular-beam epitaxy (MBE) and ion-assisted MBE (IAMBE) were studied using reflection high-energy electron diffraction and transmission electron microscopy. Three-dimensional (3D) islands nucleated during the initial stages of MBE growth at 580[degrees]C, and continued growth led to nonplanar surfaces and a high density of stacking faults and twins in the films. Irradiation by 33 eV Ar ions during IAMBE growth at 580[degrees]C suppressed 3D island nucleation, yielding relatively flat surfaces throughout growth. Antiphase domains were the only defects observed in the IAMBE films.22 refs., 3 figs.

• OSTI ID: 6342864
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 11:1; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602* -- Other Materials-- Structure & Phase Studies
665300 -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MICROSCOPY
MOLECULAR BEAM EPITAXY
NUCLEATION
PNICTIDES
SCATTERING
STACKING FAULTS
TRANSMISSION ELECTRON MICROSCOPY