GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction

Journal Article · Mon Sep 14 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4930594· OSTI ID:22489478

Orzali, Tommaso; Vert, Alexey; O'Brien, Brendan; Papa Rao, Satyavolu S. ^[1]; Herman, Joshua L.; Vivekanand, Saikumar ^[2]; Hill, Richard J. W. ^[3]; Karim, Zia ^[4]

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1. SEMATECH, 257 Fuller Rd Suite 2200, Albany, New York 12203 (United States)
2. College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, 251 Fuller Road, Albany, New York 12203 (United States)
3. Now at Micron Technologies, 8000 S Federal Way, Boise, Idaho 83716 (United States)
4. AIXTRON, Inc., 1139 Karlstad Dr., Sunnyvale, California 94089 (United States)

The Aspect Ratio Trapping technique has been extensively evaluated for improving the quality of III-V heteroepitaxial films grown on Si, due to the potential for terminating defects at the sidewalls of SiO{sub 2} patterned trenches that enclose the growth region. However, defects propagating along the trench direction cannot be effectively confined with this technique. We studied the effect of the trench bottom geometry on the density of defects of GaAs fins, grown by metal-organic chemical vapor deposition on 300 mm Si (001) wafers inside narrow (<90 nm wide) trenches. Plan view and cross sectional Scanning Electron Microscopy and Transmission Electron Microscopy, together with High Resolution X-Ray Diffraction, were used to evaluate the crystal quality of GaAs. The prevalent defects that reach the top surface of GaAs fins are (111) twin planes propagating along the trench direction. The lowest density of twin planes, ∼8 × 10{sup 8 }cm{sup −2}, was achieved on “V” shaped bottom trenches, where GaAs nucleation occurs only on (111) Si planes, minimizing the interfacial energy and preventing the formation of antiphase boundaries.

• OSTI ID: 22489478
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ASPECT RATIO
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DEFECTS
EPITAXY
FILMS
GALLIUM ARSENIDES
NUCLEATION
ORGANOMETALLIC COMPOUNDS
RESOLUTION
SCANNING ELECTRON MICROSCOPY
SILICA
SILICON OXIDES
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
TRAPPING
X-RAY DIFFRACTION