Grazing incidence x-ray scattering study of defect structures in MBE GaAs/Si using synchrotron radiation
Conference
·
OSTI ID:5529936
Defect structures in thin, MBE grown, GaAs/Si(001) heteroepitaxial films were studied with grazing incidence x-ray scattering techniques. The diffuse scattering associated with GaAs having the predominant epitaxial orientation varied strongly with the penetration depth of the x-rays. Well-directed streaks corresponding to planar faults were observed and easily distinguished from a broad and more randomly oriented background. Bragg peaks corresponding to twinned GaAs were also studied. The probability of twinning was seen to be much higher about the (111) planes whose normals, when projected onto the sample surface, lay parallel to the off-orientation direction than about the (111) planes whose normals, when projected onto the sample surface, lay perpendicular to the off-orientation direction. The intensity and breadth of the twin reflections were analyzed to estimate the corresponding defect density. The depth dependence of the twinning probability was seen to vary with growth parameters. 9 refs., 6 figs.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5529936
- Report Number(s):
- LBL-24166; CONF-8704252-1; ON: DE88004556
- Country of Publication:
- United States
- Language:
- English
Similar Records
GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction
Extrinsic effects in reflection high-energy electron diffraction patterns from MBE GaAs
Suppression of defect propagation in heteroepitaxial structures by strained layer superlattices
Journal Article
·
Mon Sep 14 00:00:00 EDT 2015
· Journal of Applied Physics
·
OSTI ID:22489478
Extrinsic effects in reflection high-energy electron diffraction patterns from MBE GaAs
Journal Article
·
Sat Mar 31 23:00:00 EST 1984
· J. Vac. Sci. Technol., B; (United States)
·
OSTI ID:6755087
Suppression of defect propagation in heteroepitaxial structures by strained layer superlattices
Conference
·
Sun May 01 00:00:00 EDT 1988
·
OSTI ID:6616044
Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
BREMSSTRAHLUNG
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELEMENTS
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INCIDENCE ANGLE
IONIZING RADIATIONS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
REFLECTION
REFLECTIVITY
SCATTERING
SEMIMETALS
SILICON
SUBSTRATES
SURFACE PROPERTIES
SYNCHROTRON RADIATION
TWINNING
X RADIATION
X-RAY DIFFRACTION
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
BREMSSTRAHLUNG
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELEMENTS
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INCIDENCE ANGLE
IONIZING RADIATIONS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
REFLECTION
REFLECTIVITY
SCATTERING
SEMIMETALS
SILICON
SUBSTRATES
SURFACE PROPERTIES
SYNCHROTRON RADIATION
TWINNING
X RADIATION
X-RAY DIFFRACTION