Ground boundaries
The present document is a progress report describing the work accomplished on the study of grain boundaries in Ag, Au, Ni, Si, and Ge. Research was focused on the following four major efforts: study of the atomic structure of grain boundaries by means of x-ray diffraction, transmission electron microscopy and computer modeling; grain boundary migration; short-circuit diffusion along grain boundaries; and development of Thin-Film Deposition/Bonding Apparatus for the manufacture of high purity bicrystals. 10 refs., 1 fig.
- Research Organization:
- Massachusetts Inst. of Tech., Cambridge, MA (USA). Dept. of Materials Science and Engineering
- Sponsoring Organization:
- DOE/ER
- DOE Contract Number:
- FG02-87ER45310
- OSTI ID:
- 6341492
- Report Number(s):
- DOE/ER/45310-21; ON: DE91004027
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
ALLOYS
CHEMICAL BONDS
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
DIFFRACTION
DIFFUSION
DISLOCATIONS
DOCUMENT TYPES
ELEMENTS
FILMS
GERMANIUM
GOLD ALLOYS
GRAIN BOUNDARIES
LINE DEFECTS
MATERIALS
METALS
MICROSTRUCTURE
NICKEL ALLOYS
PROGRESS REPORT
SCATTERING
SEGREGATION
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILVER ALLOYS
THIN FILMS
X-RAY DIFFRACTION
360102* -- Metals & Alloys-- Structure & Phase Studies
ALLOYS
CHEMICAL BONDS
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
DIFFRACTION
DIFFUSION
DISLOCATIONS
DOCUMENT TYPES
ELEMENTS
FILMS
GERMANIUM
GOLD ALLOYS
GRAIN BOUNDARIES
LINE DEFECTS
MATERIALS
METALS
MICROSTRUCTURE
NICKEL ALLOYS
PROGRESS REPORT
SCATTERING
SEGREGATION
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILVER ALLOYS
THIN FILMS
X-RAY DIFFRACTION