Grain boundaries. Progress report, February 15, 1990--October 15, 1990
The following are reported: structural studies (dislocation structure of Ni/Ag interphase boundary, structural complexity in grain boundaries with covalent bonding, relation between microscopic properties of two semiconducting grain boundaries and their orientations, diffraction effects due to double positioning in (111) Au bicrystals, sensitivity of diffraction profiles to grain boundary segregation, solute segregation at grain boundaries in Au, 4-body interatomic potential for Si for defect calculations); boundary migration studies (molecular dynamics study of grain boundary migration without participation of grain boundary dislocations); study of short-circuit diffusion along grain boundaries and its dependence on boundary structure; and thin-film deposition/bonding apparatus for manufacturing high-purity bicrystals.
- Research Organization:
- Massachusetts Inst. of Tech., Cambridge, MA (United States). Dept. of Materials Science and Engineering
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG02-87ER45310
- OSTI ID:
- 10178034
- Report Number(s):
- DOE/ER/45310--27; ON: DE94017951; BR: KC0201010
- Country of Publication:
- United States
- Language:
- English
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