Carrier effects on the excitonic absorption in GaAs quantum-well structures: Phase-space filling
- Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL (USA)
The carrier effects on the excitonic absorption in GaAs quantum-well structures have been investigated both theoretically and experimentally. A two-dimensional model was used to calculate the oscillator strength and binding energy of excitons associated with filled subbands, with phase-space filling being taken into account. The calculation gives explicitly the oscillator strength of excitons as a function of two-dimensional carrier density. The results are compared with measured absorption data from a series of {ital p}-type modulation-doped GaAs/Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As multiple-quantum-well structures, and quantitative agreement is obtained. The calculation shows that the effect of phase-space filling on the binding energy of a bound state can be described by an effective dielectric constant as a function of carrier density. It predicts the decrease of exciton binding energy with carrier density due to phase-space filling, which has been experimentally observed.
- DOE Contract Number:
- AC02-76ER01198
- OSTI ID:
- 6337610
- Journal Information:
- Physical Review, B: Condensed Matter; (USA), Vol. 42:8; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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ALUMINIUM ARSENIDES
ABSORPTION SPECTRA
GALLIUM ARSENIDES
BINDING ENERGY
CHARGE CARRIERS
DIELECTRIC PROPERTIES
DOPED MATERIALS
EXCITONS
HETEROJUNCTIONS
MATHEMATICAL MODELS
MODULATION
OSCILLATOR STRENGTHS
TWO-DIMENSIONAL CALCULATIONS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL PROPERTIES
ENERGY
GALLIUM COMPOUNDS
JUNCTIONS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR JUNCTIONS
SPECTRA
360603* - Materials- Properties