Effect of exciton-carrier thermodynamics on the GaAs quantum well photoluminescence

Journal Article · Mon Jul 01 04:00:00 EDT 1996 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.54.2763· OSTI ID:286379

Yoon, H W; Wake, D R; Wolfe, J P ^[1]

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1. Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

In order to explain the power-dependent temporal behavior of the photoluminescence from free excitons in a GaAs quantum well following a short optical pulse, we consider the excitons and free carriers to be a nearly ideal gas in thermodynamic equilibrium. The temperature of the gas, which decreases in time after the pulse due to cooling by phonon emission, can be measured experimentally from the free-carrier recombination luminescence. Because only excitons with near-zero kinetic energy can luminesce, the photoluminescence intensity depends on the excitonic-gas temperature. Due to the law of mass action between excitons and free carriers, the photoluminescence intensity of excitons also depends on the density of the gas, which decays in time. Using the known binding energy of excitons, we find that the density-dependent temporal behavior of the photoluminescence is consistent with a simple thermodynamic equilibrium between excitons and free carriers. {copyright} {ital 1996 The American Physical Society.}

• Research Organization: University of Illinois
• DOE Contract Number: AC02-76ER01198
• OSTI ID: 286379
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 4 Vol. 54; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BINDING ENERGY
EXCITONS
GALLIUM ARSENIDES
PHOTOLUMINESCENCE
TEMPERATURE DEPENDENCE
THERMODYNAMIC PROPERTIES