Carrier effects on the excitonic absorption in GaAs quantum-well structures: Phase-space filling

Journal Article · Sat Sep 15 04:00:00 EDT 1990 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.42.5147· OSTI ID:6337610

Huang, D; Chyi, J; Morkoc, H ^[1]

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1. Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL (USA)

The carrier effects on the excitonic absorption in GaAs quantum-well structures have been investigated both theoretically and experimentally. A two-dimensional model was used to calculate the oscillator strength and binding energy of excitons associated with filled subbands, with phase-space filling being taken into account. The calculation gives explicitly the oscillator strength of excitons as a function of two-dimensional carrier density. The results are compared with measured absorption data from a series of {ital p}-type modulation-doped GaAs/Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As multiple-quantum-well structures, and quantitative agreement is obtained. The calculation shows that the effect of phase-space filling on the binding energy of a bound state can be described by an effective dielectric constant as a function of carrier density. It predicts the decrease of exciton binding energy with carrier density due to phase-space filling, which has been experimentally observed.

• DOE Contract Number: AC02-76ER01198
• OSTI ID: 6337610
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 42:8; ISSN 0163-1829; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ABSORPTION SPECTRA
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BINDING ENERGY
CHARGE CARRIERS
DIELECTRIC PROPERTIES
DOPED MATERIALS
ELECTRICAL PROPERTIES
ENERGY
EXCITONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
MATERIALS
MATHEMATICAL MODELS
MODULATION
OSCILLATOR STRENGTHS
PHYSICAL PROPERTIES
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR JUNCTIONS
SPECTRA
TWO-DIMENSIONAL CALCULATIONS