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Title: Response of excitonic absorption spectra to photoexcited carriers in GaAs quantum wells

Journal Article · · Physical Review, B: Condensed Matter; (United States)
; ;  [1];  [2]
  1. Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  2. Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

The changes induced in the optical-absorption spectrum of a GaAs/Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As multiple-quantum well due to photoexcited carrier distributions are reexamined. We use a picosecond pump-probe technique to excite carriers in a sample having wells of thickness 210 A and barriers of thickness 100 A. We find that for densities up to 1{times}10{sup 11} cm{sup {minus}2} the peak of the exciton line of the lowest-energy exciton becomes bleached; however the spectrally integrated area does not change, indicating that the carriers reduce the absorption peak by collision broadening rather than by phase-space filling or exchange. We also observe shifts of the exciton line to higher energy ( blueshift'') or to lower energy ( redshift'') depending on the energy of the pump photons. The shift can be ascribed to competing effects of band-gap renormalization and the change in the binding energy of the exciton, although a detailed theoretical description is still needed.

DOE Contract Number:
AC02-76ER01198
OSTI ID:
7038228
Journal Information:
Physical Review, B: Condensed Matter; (United States), Vol. 46:20; ISSN 0163-1829
Country of Publication:
United States
Language:
English