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Title: Electronic characterization of mercuric iodide gamma ray spectrometers

Conference ·
OSTI ID:6337510

During the past four years the yield of high resolution mercuric iodide (HgI[sub 2]) gamma ray spectrometers produced at EG G/EM has increased dramatically. Data is presented which demonstrates a strong correlation between starting material and spectrometer performance. Improved spectrometer yields are attributed to the method of HgI[sub 2] synthesis and to material purification procedures. Data is presented which shows that spectrometer performance is correlated with hole mobility-lifetime products. In addition, the measurement of Schottky barrier heights on HgI[sub 2] spectrometers has been performed using I-V curves and the photoelectric method. Barrier heights near 1.1 eV have been obtained using various contacts and contact deposition methods. These data suggest the pinning of the Fermi level at midgap at the HgI[sub 2] surface, probably due to surface states formed prior to contact deposition.

Research Organization:
EG and G Energy Measurements, Inc., Goleta, CA (United States). Santa Barbara Operations
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
AC08-88NV10617
OSTI ID:
6337510
Report Number(s):
EGG-10617-2182; CONF-930405-22; ON: DE93015524
Resource Relation:
Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 12-16 Apr 1993
Country of Publication:
United States
Language:
English