Electron energy-loss spectroscopy analysis of low-temperature plasma-enhanced chemically vapor deposited a-C:H films

Journal Article · Mon May 01 00:00:00 EDT 1989 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.576284· OSTI ID:6336299

Nelson, A J; Benson, D K; Tracy, C E; Kazmerski, L L; Wager, J F

Electron energy-loss spectroscopy (EELS) has been applied to the analysis of a-C:H films grown on various substrates by a unique low-temperature (<100 /sup 0/C) plasma-enhanced chemical vapor deposition (PECVD) process using ethylene and hydrogen gases. EELS data are used to characterize the relative amounts of fourfold coordinated sp/sup 3/ carbon bonding to threefold coordinated sp/sup 2/ carbon bonding as well as the relative order/disorder due to substrate effects. Ellipsometric and transmission measurements provide optical constants for the PECVD a-C:H films.

• Research Organization: Solar Energy Research Institute, Golden, Colorado 80401
• OSTI ID: 6336299
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:3; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure &amp; Phase Studies
AMORPHOUS STATE
CARBON
CHEMICAL BONDS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DATA
DEPOSITION
ELECTRON SPECTROSCOPY
ELEMENTS
ENERGY-LOSS SPECTROSCOPY
EXPERIMENTAL DATA
FILMS
HYDROGEN ADDITIONS
INFORMATION
MEDIUM TEMPERATURE
NONMETALS
NUMERICAL DATA
ORDER PARAMETERS
SPECTROSCOPY
SURFACE COATING
THIN FILMS