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Gas effects on the growth and electrophysical parameters of PbTe, SnTe and Pb/sub 1-x/Sn/sub x/Te films

Journal Article · · Inorg. Mater. (Engl. Transl.); (United States)
OSTI ID:6336125
We examined the effects of various residual gases on the growth and electrophysical parameters of PbTe, SnTe and Pb/sub 1-x/Sn/sub x/Te films. The films were made under vacuum and in hydrogen, argon, and oxygen at various residual pressures, as well as by the gas-transport method in hydrogen. The transport agent was grade V-5 iodine. A transmission electron microscope was used to examine the structure and morphology. Reactions are responsible for the improved structures of films grown in hydrogen; the hydrogen heals defects. There is a critical gas pressure for which the rate-limiting stage shifts from mass transfer to surface processes. Films grow in argon by the vapor-crystal mechanism. When PbTe, SnTe, and Pb/sub 1-x/Sn/sub x/Te films are grown by gas transport, I/sub 2/ doping occurs.
Research Organization:
Dagestan State Pedagogic Institute (USSR)
OSTI ID:
6336125
Journal Information:
Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 24:2; ISSN INOMA
Country of Publication:
United States
Language:
English