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Topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te thin films on SrTiO{sub 3} (001) with tunable Fermi levels

Journal Article · · APL Materials
DOI:https://doi.org/10.1063/1.4876637· OSTI ID:22269161
; ; ; ; ; ; ;  [1];  [1];  [2]; ; ;  [3]
  1. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084 (China)
  2. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)
  3. Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
In this letter, we report a systematic study of topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te (0 < x < 1) thin films grown by molecular beam epitaxy on SrTiO{sub 3}(001). Two domains of Pb{sub x}Sn{sub 1-x}Te thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). ARPES study of Pb{sub x}Sn{sub 1-x}Te thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of Pb{sub x}Sn{sub 1-x}Te thin films.
OSTI ID:
22269161
Journal Information:
APL Materials, Journal Name: APL Materials Journal Issue: 5 Vol. 2; ISSN AMPADS; ISSN 2166-532X
Country of Publication:
United States
Language:
English

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