Effect of hydrostatic pressure and uniaxial strain on the electronic structure of Pb1-xSnxTe
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- Max Planck Institute of Microstructure Physics, Halle (Germany)
- Martin Luther Univ. Halle-Wittenberg, Halle (Germany)
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Berhampur Univ., Odisha (India)
- Univ. of Duisburg-Essen, Duisburg (Germany)
The electronic structure of Pb1–xSnxTe is studied by using the relativistic Korringa-Kohn-Rostoker Green function method in the framework of density functional theory. For all concentrations x, Pb1–xSnxTe is a direct semiconductor with a narrow band gap. In contrast to pure lead telluride, tin telluride shows an inverted band characteristic close to the Fermi energy. It will be shown that this particular property can be tuned, first, by alloying PbTe and SnTe and, second, by applying hydrostatic pressure or uniaxial strain. Furthermore, the magnitude of strain needed to switch between the regular and inverted band gap can be tuned by the alloy composition. In conclusion, there is a range of potential usage of Pb1–xSnxTe for spintronic applications.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE; USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC52-07NA27344
- OSTI ID:
- 1260496
- Alternate ID(s):
- OSTI ID: 1228442
- Report Number(s):
- LLNL-JRNL--695259
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 23 Vol. 92; ISSN 1098-0121; ISSN PRBMDO
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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