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Heat-shock induction of ionizing radiation resistance in Saccharomyces cerevisiae. Transient changes in growth cycle distribution and recombinational ability. [/sup 60/Co]

Journal Article · · Radiat. Res.; (United States)
DOI:https://doi.org/10.2307/3575853· OSTI ID:6325702
It was shown previously that a heat shock induces a transient increase in the resistance of wild-type Saccharomyces cerevisiae to the lethal effects of ionizing radiation. This increase was similar to the increase in resistance to thermal killing induced by the same heat shock, but appeared at a slightly earlier time after the temperature increase. This type showed that while excision-defective mutants respond like the wild type, recombination-deficient mutants do not display this heat-shock induction of radiation resistance, but still show induction of thermal resistance. Radiation survival curves of wild-type cells exposed to the elevated temperature were able to resolve two populations of cells on the basis of their sensitivity to ionizing radiation. Following a heat shock, the proportion of resitant cells increased temporarily in parallel with the increase in radiation resistance. We conclude that heat-shock induction of radiation resistance in wild-type diploid yeast results from at least two changes, an increase in recombinational repair capacity, possibly associated with G1 cells, and a shift in population distribution to a higher fraction of resistant cells. We further conclude that heat-shock induction of thermal resistance proceeds by an independent mechanism.
Research Organization:
Chalk River Laboratories, Ontario, Canada
OSTI ID:
6325702
Journal Information:
Radiat. Res.; (United States), Journal Name: Radiat. Res.; (United States) Vol. 92:1; ISSN RAREA
Country of Publication:
United States
Language:
English