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Heat-shock induction of ionizing radiation resistance in Saccharomyces cerevisiae, and the correlation with stationary growth phase. [/sup 60/Co]

Journal Article · · Radiat. Res.; (United States)
DOI:https://doi.org/10.2307/3575706· OSTI ID:5296731
Radiation resistance and thermal resistance vary as a function of culture temperature in logarithmically growing Saccharomyces cerevisiae and are related to the optimum temperature for growth. Radiation resistance and thermal resistance were also induced when cells grown at low temperatures were subjected to a heat shock at or above the optimum growth temperature. Exposure to ionizing radiation followed by a short incubation at low temperature also induced resistance to killing by heat. Heat-shocked cells are induced to a level of thermal and radioresistance much greater than the characteristic resistance level of cells grown continuously at the shock temperature. This high level of resistance, which resembles that of stationary-phase cells, decays to the characteristic log-phase level within one doubling of cell number after the heat shock. Both induction of resistance and decay of that induction require protein synthesis. It is postulated that induction of resistance by heat shock or ionizing radiation is a response of the cells to stress and represents a preparation to enter stationary phase.
Research Organization:
Chalk River Nuclear Laboratories, Ontario, Canada
OSTI ID:
5296731
Journal Information:
Radiat. Res.; (United States), Journal Name: Radiat. Res.; (United States) Vol. 90:2; ISSN RAREA
Country of Publication:
United States
Language:
English

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