Kinetic modeling of silane surface reactions
- Northeastern Univ., Boston, MA (United States). Dept. of Mechanical Engineering
A detailed kinetic modeling for SiH{sub 4}/H{sub 2} surface reactions on Si(111)-(7 {times} 7) surface during chemical vapor deposition is presented. Based on the conservation of adsorbed species at steady state, an analytical expression for growth rate (GR) as a function of surface temperature, silane and hydrogen partial pressures is derived. By curve fitting to previously reported experimental values, preexponential coefficients and activation energies in the GR formula are further derived. Predictions of GR, E{sub app}, and T{sub tr} under different growth parameters are given and compared to literature values. The model is further extended to SiH{sub 4}/H{sub 2} mixture surface reactions thus the reaction orders of SiH{sub 4} and H{sub 2} are predicted. Good agreements with literature values are obtained under low pressure conditions.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 63204
- Journal Information:
- Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 5 Vol. 142; ISSN 0013-4651; ISSN JESOAN
- Country of Publication:
- United States
- Language:
- English
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