Surface chemistry of epitaxial-silicon deposition by thermal cracking of silane
The kinetics of the thermal cracking of silane during the epitaxial growth on the (111) face of single crystal silicon were studied by modulated molecular beam mass spectrometry in an ultra-high vacuum system. Data were recorded in the temperature range of approx. 1000 K to 1450 K, beam intensity of approx. 2 x 20/sup 15/ to 2 x 10/sup 16/ molecules/cm/sup 2/-s, and modulation frequency of 20 to 900 Hz. The data above 1130 K were used for the construction of a reaction model. The residence time of silane on the surface was below the sensitivity limit of the technique (< 5 ..mu..s). Application of a simultaneous modulated beam of SiH/sub 4/ and a steady beam of SiD/sub 4/ did not produce HD molecules, thus ruling out hydrogen atom production in the surface reaction mechanism. According to the proposed model, silane molecules which do not reflect from the surface undergo a branched reaction with two types of sites on the surface, producing two bound SiH/sub 2/ molecules in each chemisorption event. Subsequent surface decomposition of the adsorbed SiH/sub 2/ molecules occur with different pre-exponential factors, although with similar activation energies of about 17 kcal/mole for the two types of sites.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6266546
- Report Number(s):
- LBL-15448; ON: DE83012895
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
CHEMICAL REACTIONS
CRACKING
CRYSTALS
DECOMPOSITION
DEPOSITION
ELEMENTS
EPITAXY
HYDRIDES
HYDROGEN COMPOUNDS
MONOCRYSTALS
PYROLYSIS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SURFACES
TEMPERATURE DEPENDENCE
THERMAL CRACKING
THERMOCHEMICAL PROCESSES
VERY HIGH TEMPERATURE