High speed anisotropic reactive ion etching of gold films
Journal Article
·
· Journal of the Electrochemical Society
- Lawrence Livermore National Lab., CA (United States)
Etching of gold films using chlorine gas was investigated using a parallel plate reactive ion etching machine. Etch rates of 4400 to 9800 {angstrom}/min were achieved with power levels of 200 to 400 W and pressures of 50 to 100 mTorr. The gold film was patterned with an SiO{sub 2} mask. The lower electrode and sample were heated to 125 C. Under these conditions the etch was anisotropic with no undercutting and no redeposition of gold on the sample. Linewidths as small as 0.5 {mu}m and etch depths of 5 {mu}m were produced.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 63199
- Journal Information:
- Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 5 Vol. 142; ISSN 0013-4651; ISSN JESOAN
- Country of Publication:
- United States
- Language:
- English
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