MOVPE-grown 1. 5. mu. m distributed feedback lasers on corrugated InP substrates

Journal Article · Mon Jun 01 00:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073410· OSTI ID:6319077

Oishi, M; Nakao, M; Itaya, Y; Sato, K; Imamura, Y

A single-step low-pressure metalorganic vapor phase epitaxy (MOVPE) was applied to the fabrication of 1.5 ..mu..m InGaAsP/InP distributed feedback laser diodes on corrugated InP substrates, accompanied by LPE for buried heterostructure formation. High probability of single longitudinal mode operation was obtained due to the uniformity of the active layer thickness. A typical threshold current was 35 mA with both facets cleaved. A maximum output power of up to 27 mW was also obtained under single longitudinal mode operation with anti-reflective/cleaved facet configuration. The laser diode had high spectral stability under high-frequency direct modulation of 1.4 GHz.

• Research Organization: NTT Electrical Communications Labs., Atsugi-shi, Kanagawa 243-01
• OSTI ID: 6319077
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. QE-23:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
VAPOR PHASE EPITAXY
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
SEMICONDUCTOR LASERS
FABRICATION
CRYSTAL GROWTH
DESIGN
FEEDBACK
FREQUENCY MODULATION
GHZ RANGE 01-100
PRESSURE DEPENDENCE
SEMICONDUCTOR DIODES
SUBSTRATES
WAVELENGTHS
ARSENIC COMPOUNDS
ARSENIDES
EPITAXY
FREQUENCY RANGE
GALLIUM COMPOUNDS
GHZ RANGE
INDIUM COMPOUNDS
LASERS
MODULATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)
360601 - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies