Longitudinal mode behaviors of 1. 5. mu. m range GaInAsP/InP distributed feedback lasers
Longitudinal mode behaviors of asymmetric structure distributed feedback buried heterostructure (DFB-BH) lasers are examined theoretically and experimentally. A 1.5 ..mu..m range GaInAsP/InP DFB-BH laser was fabricated by a three-step LPE growth process. The authors measured the stopband in the spectrum of the DFB laser. It was found that no resonance mode emission occurred in the gain spectrum and its spectrum was asymmetric with respect to the Bragg wavelength. Most of the lasing power concentrated on the DFB mode adjacent to the stopband which was determined by the Bragg condition. The measured spectrum was explained by the calculated results of the coupled wave theory with external reflectors. The asymmetric spectrum was caused by the relative position of the cleaved facet on the corrugation grating. It was shown that the asymmetric structure DFB laser, which consisted of two end facets with different reflection coefficients, gives a stable single longitudinal mode. There was no mode jump up to 2.3 times threshold. At a modulation depth of 100 percent, the ratio of the highest nonlasing mode intensity to the lasing DFB mode was estimated to be - 16.0 dB.
- Research Organization:
- Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corp., Kanagawa
- OSTI ID:
- 6194737
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-20:3; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
ELECTROMAGNETIC RADIATION
FABRICATION
FEEDBACK
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GRATINGS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFRARED RADIATION
JUNCTIONS
LASERS
MODULATION
OPTICAL MODES
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
REFLECTION
RESONANCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SPECTRA