MOVPE-grown 1. 5. mu. m distributed feedback lasers on corrugated InP substrates

Journal Article · Mon Jun 01 04:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073410· OSTI ID:6319077

Oishi, M; Nakao, M; Itaya, Y; Sato, K; Imamura, Y

A single-step low-pressure metalorganic vapor phase epitaxy (MOVPE) was applied to the fabrication of 1.5 ..mu..m InGaAsP/InP distributed feedback laser diodes on corrugated InP substrates, accompanied by LPE for buried heterostructure formation. High probability of single longitudinal mode operation was obtained due to the uniformity of the active layer thickness. A typical threshold current was 35 mA with both facets cleaved. A maximum output power of up to 27 mW was also obtained under single longitudinal mode operation with anti-reflective/cleaved facet configuration. The laser diode had high spectral stability under high-frequency direct modulation of 1.4 GHz.

• Research Organization: NTT Electrical Communications Labs., Atsugi-shi, Kanagawa 243-01
• OSTI ID: 6319077
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
DESIGN
EPITAXY
FABRICATION
FEEDBACK
FREQUENCY MODULATION
FREQUENCY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GHZ RANGE
GHZ RANGE 01-100
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
MODULATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PRESSURE DEPENDENCE
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SUBSTRATES
VAPOR PHASE EPITAXY
WAVELENGTHS