Aging characteristics of 1. 65-. mu. m InGaAs/InP buried heterostructure lasers grown by molecular-beam and liquid phase epitaxy

Journal Article · Wed Feb 01 04:00:00 EST 1984 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.333110· OSTI ID:5381255

Asahi, H; Fukuda, M; Kawamura, Y; Noguchi, Y; Nagai, H; Takahei, K

Room temperature aging tests have been carried out on molecular beam epitaxially grown InGaAs/InP BH (buried heterostructure) lasers with LPE (liquid phase epitaxy) InP burying layers and LPE-grown InGaAs/InP BH lasers. Both types of lasers have operated continuously at room temperature in air for more than 8000 h at 4--8 mW/facet, and are still operating stably. Except for slight changes in the threshold currents at an early stage of the aging test, these lasers did not show noticeable change in the longitudinal mode, far field pattern, and light output response under pulsed operation before and after aging.

• Research Organization: Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Atsugi-shi, Kanagawa 243-01, Japan
• OSTI ID: 5381255
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 55:3; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AGING
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFRARED RADIATION
JUNCTIONS
LASER RADIATION
LASERS
LIQUID PHASE EPITAXY
MOLECULAR BEAM EPITAXY
OPERATION
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
RELIABILITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT