Reliability of InGaAsP/InP buried heterostructure 1. 3. mu. m lasers

Journal Article · Mon Aug 01 00:00:00 EDT 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1072019· OSTI ID:5215879

Mizuishi, K I; Hirao, M; Nakamura, M; Sawai, M; Todoroki, S; Tsuji, S

A study was conducted of aging-induced Sn whisker growth at the surface of Au-Sn bonding solder layers around a laser chip, as well as metallurgical reactions, especially in p-side down lasers, at the interface of the solder and laser crystal just below the active layer. These phenomena cause electrical shorts in InGaAsP/InP laser diodes, which occur suddenly in devices operated for long periods without any previous symptoms having appeared in their aging characteristics. To completely eliminate such failures, a novel assembling method in which chips were mounted p-side up on semiinsulating SiC submounts using Pb-Sn solder, was applied to InGaAsP/InP buried heterostructure (BH) lasers emitting at 1.3 ..mu..m. BH lasers assembled by this method do not suffer any shorting failure even after 8000 h operation under 60/sup 0/C and 5 mW/facet output conditions. The small degradation rates obtained, for example, 3 percent/kh (median) at 60/sup 0/C, certify the reliability of these improved lasers. As long as the stripe width of the active layer was optimized to be in the range of 1.5-2.5 ..mu..m necessary for obtaining kink-free light output versus current properties, no detrimental changes in laser characteristics, including transverse and longitudinal modes and dynamic output response, were observed in aged lasers. In this paper, the long-term degradation modes observed are presented, and possible causes are discussed.

• Research Organization: Central Research Lab., Hitachi, Ltd., Kokubunji, Tokyo
• OSTI ID: 5215879
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-19:8; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AGING
ARSENIC COMPOUNDS
ARSENIDES
CARBIDES
CARBON COMPOUNDS
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GOLD
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JOINTS
JUNCTIONS
LASERS
LEAD
METALLURGICAL FLUX
METALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RELIABILITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SILICON CARBIDES
SILICON COMPOUNDS
SOLDERED JOINTS
TIN
TRANSITION ELEMENTS