Combined effects of hot-carrier stressing and ionizing radiation in SiO[sub 2], NO, and ONO MOSFET's

Journal Article · Fri Jan 01 04:00:00 EST 1993 · IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/55.215093· OSTI ID:6318148

Das, N C; Nathan, V ^[1]; Dacus, S; Cable, J ^[2]

---

1. Phillips Lab., Kirtland AFB, NM (United States)
2. TRW Microelectronic Research Center, Redondo Beach, CA (United States)

N-channel MOSFET's with different gate dielectrics, such as silicon dioxide, silicon dioxide annealed in nitrous oxide (NO), and reoxidized nitrided oxide (ONO) were first hot-carrier (HC) stressed and then irradiated to a total dose of 1.5 Mrd. For equal substrate current stressing NO devices have the least degradation, whereas the threshold voltage (V[sub t]) shift due to irradiation is maximum for these devices. For all three types of gate dielectrics the V[sub t] shift due to irradiation of HC stressed devices was higher than that of the unstressed device. However, for ONO devices the V[sub t] shift due to irradiation of the hot-electron (HE) stressed (stressing with V[sub d] = V[sub g] = 6.5 V) device was less than that of the unstressed device.

• OSTI ID: 6318148
• Journal Information: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 14:1; ISSN 0741-3106; ISSN EDLEDZ
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHALCOGENIDES
DATA
DIELECTRIC MATERIALS
DOSES
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
INFORMATION
IONIZING RADIATIONS
IRRADIATION
MATERIALS
MOS TRANSISTORS
MOSFET
NITROGEN COMPOUNDS
NITROGEN OXIDES
NITROUS OXIDE
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS